All MOSFET. GT4953 Datasheet

 

GT4953 Datasheet and Replacement


   Type Designator: GT4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SO8
 

 GT4953 substitution

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GT4953 Datasheet (PDF)

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GT4953

GT4953www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

Datasheet: FU120N , FU9024N , FW232A-TL-E , FW342-TL , G2306A , G2309 , GE3401 , GF4435 , IRFB4227 , GTT8205S , H7N0308CF , HAF2007-90S , HAT1020RJ , HAT1024RJ , HAT1048RJ , HAT2016RJ , HAT2029RJ .

History: FK330309

Keywords - GT4953 MOSFET datasheet

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