GT4953 PDF and Equivalents Search

 

GT4953 Specs and Replacement

Type Designator: GT4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SO8

GT4953 substitution

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GT4953 datasheet

 ..1. Size:1990K  cn vbsemi
 gt4953.pdf pdf_icon

GT4953

GT4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View ... See More ⇒

Detailed specifications: FU120N, FU9024N, FW232A-TL-E, FW342-TL, G2306A, G2309, GE3401, GF4435, 10N60, GTT8205S, H7N0308CF, HAF2007-90S, HAT1020RJ, HAT1024RJ, HAT1048RJ, HAT2016RJ, HAT2029RJ

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