GTT8205S PDF and Equivalents Search

 

GTT8205S Specs and Replacement

Type Designator: GTT8205S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 typ Ohm

Package: TSOP6

GTT8205S substitution

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GTT8205S datasheet

 ..1. Size:2350K  cn vbsemi
 gtt8205s.pdf pdf_icon

GTT8205S

GTT8205S www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3 ... See More ⇒

Detailed specifications: FU9024N, FW232A-TL-E, FW342-TL, G2306A, G2309, GE3401, GF4435, GT4953, AON6414A, H7N0308CF, HAF2007-90S, HAT1020RJ, HAT1024RJ, HAT1048RJ, HAT2016RJ, HAT2029RJ, HAT2064RJ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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