All MOSFET. GTT8205S Datasheet

 

GTT8205S Datasheet and Replacement


   Type Designator: GTT8205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
   Package: TSOP6
 

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GTT8205S Datasheet (PDF)

 ..1. Size:2350K  cn vbsemi
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GTT8205S

GTT8205Swww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23

Datasheet: FU9024N , FW232A-TL-E , FW342-TL , G2306A , G2309 , GE3401 , GF4435 , GT4953 , IRFB4110 , H7N0308CF , HAF2007-90S , HAT1020RJ , HAT1024RJ , HAT1048RJ , HAT2016RJ , HAT2029RJ , HAT2064RJ .

History: SCT2750NY | IRF7306QPBF

Keywords - GTT8205S MOSFET datasheet

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