HAT2016RJ Datasheet and Replacement
Type Designator: HAT2016RJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
Package: SO8
HAT2016RJ substitution
HAT2016RJ Datasheet (PDF)
hat2016rj.pdf
HAT2016RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
rej03g1156 hat2016rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2016r.pdf
HAT2016Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
hat2019r.pdf
HAT2019R N MOS FETADJ-208-474 (Z)96.06 2.5V SOP856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S
Datasheet: GF4435 , GT4953 , GTT8205S , H7N0308CF , HAF2007-90S , HAT1020RJ , HAT1024RJ , HAT1048RJ , IRFP250N , HAT2029RJ , HAT2064RJ , HM10N10K , HM2300 , HM2301KR , HM2305PR , HM2310 , HM2310PR .
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