HS50N06DA MOSFET. Datasheet pdf. Equivalent
Type Designator: HS50N06DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
HS50N06DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HS50N06DA Datasheet (PDF)
hs50n06da.pdf
HS50N06DAwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
hs50n06pa.pdf
HS50N06PAPbHS50N06PAPb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A
hihs50n65h-sa.pdf
Aug 2023HIHS50N65H-SA (TO-247 Isolation)650V N-Channel Trench Field Stop IGBTFeaturesKey Parameters Very Low VCE(sat)Parameter Value Unit Extremely low switching lossVCES 650 V Excellent stability and uniformityIC 50 A Soft Fast Reverse Recovery DiodeVCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolationEtot 1.
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
