HS50N06DA Datasheet and Replacement. Cross Reference Search

HS50N06DA Datasheet (PDF)

..1. Size:988K cn vbsemi
hs50n06da.pdf pdf_icon

HS50N06DAwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

7.1. Size:1122K thinkisemi
hs50n06pa.pdf pdf_icon

HS50N06PAPbHS50N06PAPb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A

9.1. Size:547K semihow
hihs50n65h-sa.pdf pdf_icon

Aug 2023HIHS50N65H-SA (TO-247 Isolation)650V N-Channel Trench Field Stop IGBTFeaturesKey Parameters Very Low VCE(sat)Parameter Value Unit Extremely low switching lossVCES 650 V Excellent stability and uniformityIC 50 A Soft Fast Reverse Recovery DiodeVCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolationEtot 1.

Datasheet: HM2310 , HM2310PR , HM25P06K , HM3400PR , HM4409 , HM4410 , HM70P04K , HM8810E , IRF9540N , IM2132 , IM4435G , IPP048N04 , IPP048N06 , IRF3410 , IRF4435TR , IRF5305STR , IRF540NSTRPBF .