HS50N06DA Specs and Replacement

Type Designator: HS50N06DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

HS50N06DA substitution

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HS50N06DA datasheet

 ..1. Size:988K  cn vbsemi
 hs50n06da.pdf pdf_icon

HS50N06DA

HS50N06DA www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit ... See More ⇒

 7.1. Size:1122K  thinkisemi
 hs50n06pa.pdf pdf_icon

HS50N06DA

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 9.1. Size:547K  semihow
 hihs50n65h-sa.pdf pdf_icon

HS50N06DA

Aug 2023 HIHS50N65H-SA (TO-247 Isolation) 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit Extremely low switching loss VCES 650 V Excellent stability and uniformity IC 50 A Soft Fast Reverse Recovery Diode VCE(sat) 1.45 V Maximum Junction temperature, TJ(max)=175 2,500VRMS electrical isolation Etot 1.... See More ⇒

Detailed specifications: HM2310, HM2310PR, HM25P06K, HM3400PR, HM4409, HM4410, HM70P04K, HM8810E, SKD502T, IM2132, IM4435G, IPP048N04, IPP048N06, IRF3410, IRF4435TR, IRF5305STR, IRF540NSTRPBF

Keywords - HS50N06DA MOSFET specs

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