All MOSFET. IRF5305STR Datasheet

 

IRF5305STR Datasheet and Replacement


   Type Designator: IRF5305STR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048(typ) Ohm
   Package: TO263
 

 IRF5305STR substitution

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IRF5305STR Datasheet (PDF)

 ..1. Size:2441K  cn vbsemi
 irf5305str.pdf pdf_icon

IRF5305STR

IRF5305STRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Loa

 6.1. Size:700K  international rectifier
 irf5305lpbf irf5305spbf.pdf pdf_icon

IRF5305STR

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 6.2. Size:700K  international rectifier
 irf5305spbf irf5305lpbf.pdf pdf_icon

IRF5305STR

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 6.3. Size:171K  international rectifier
 irf5305s.pdf pdf_icon

IRF5305STR

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

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Datasheet: HM8810E , HS50N06DA , IM2132 , IM4435G , IPP048N04 , IPP048N06 , IRF3410 , IRF4435TR , IRF1407 , IRF540NSTRPBF , IRF540ZP , IRF5802TR , IRF5803TRPBF , IRF5805TRPBF , IRF5851TR , IRF610P , IRF630P .

History: SVF12N60K

Keywords - IRF5305STR MOSFET datasheet

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