All MOSFET. IRFIZ24GP Datasheet

 

IRFIZ24GP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFIZ24GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95(max) nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027(typ) Ohm
   Package: TO220F

 IRFIZ24GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIZ24GP Datasheet (PDF)

 ..1. Size:2575K  cn vbsemi
 irfiz24gp.pdf

IRFIZ24GP IRFIZ24GP

IRFIZ24GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

 0.1. Size:1555K  international rectifier
 irfiz24g irfiz24gpbf.pdf

IRFIZ24GP IRFIZ24GP

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

 6.1. Size:919K  international rectifier
 irfiz24g.pdf

IRFIZ24GP IRFIZ24GP

PD - 94875IRFIZ24GPbF Lead-Free12/9/03Document Number: 91187 www.vishay.com1IRFIZ24GPbFDocument Number: 91187 www.vishay.com2IRFIZ24GPbFDocument Number: 91187 www.vishay.com3IRFIZ24GPbFDocument Number: 91187 www.vishay.com4IRFIZ24GPbFDocument Number: 91187 www.vishay.com5IRFIZ24GPbFDocument Number: 91187 www.vishay.com6IRFIZ24GPbFTO-220 Full-

 6.2. Size:1554K  vishay
 irfiz24g sihfiz24g.pdf

IRFIZ24GP IRFIZ24GP

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

 6.3. Size:275K  inchange semiconductor
 irfiz24g.pdf

IRFIZ24GP IRFIZ24GP

iscN-Channel MOSFET Transistor IRFIZ24GFEATURESLow drain-source on-resistance:RDS(ON) =0.1 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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