FDA15N65 PDF and Equivalents Search

 

FDA15N65 Specs and Replacement

Type Designator: FDA15N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO3PN

FDA15N65 substitution

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FDA15N65 datasheet

 ..1. Size:876K  fairchild semi
 fda15n65.pdf pdf_icon

FDA15N65

January 2007 TM UniFET FDA15N65 650V N-Channel MOSFET Features Description 16A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especially tailor... See More ⇒

Detailed specifications: STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , IRFZ46N , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F .

History: FDA38N30 | FQU13N06L | FDA20N50F | STP53N05

Keywords - FDA15N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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