All MOSFET. FDA15N65 Datasheet

 

FDA15N65 Datasheet and Replacement


   Type Designator: FDA15N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO3PN
 

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FDA15N65 Datasheet (PDF)

 ..1. Size:876K  fairchild semi
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FDA15N65

January 2007TMUniFETFDA15N65 650V N-Channel MOSFETFeatures Description 16A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especially tailor

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History: LSNC65R180HT

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