All MOSFET. FDA18N50 Datasheet

 

FDA18N50 Datasheet and Replacement


   Type Designator: FDA18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 239 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO3PN
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FDA18N50 Datasheet (PDF)

 ..1. Size:732K  fairchild semi
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FDA18N50

October 2006TMUniFETFDA18N50500V N-Channel MOSFETFeatures Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to

 ..2. Size:1777K  onsemi
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FDA18N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | FDMS9620S

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