FDA18N50 PDF and Equivalents Search

 

FDA18N50 Specs and Replacement

Type Designator: FDA18N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 239 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: TO3PN

FDA18N50 substitution

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FDA18N50 datasheet

 ..1. Size:732K  fairchild semi
 fda18n50.pdf pdf_icon

FDA18N50

October 2006 TM UniFET FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 ..2. Size:1777K  onsemi
 fda18n50.pdf pdf_icon

FDA18N50

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , IRLB3034 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F .

History: FQU13N10L

Keywords - FDA18N50 MOSFET specs

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