FDA20N50F109 PDF Specs and Replacement
Type Designator: FDA20N50F109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO3PN
FDA20N50F109 substitution
FDA20N50F109 PDF Specs
fda20n50f.pdf
October 2007 UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26 Features Description RDS(on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 50nC ) stripe, DMOS technology. Low Crss ( Typ. 27pF ) This advance technology has been es... See More ⇒
fda20n50 f109.pdf
July 2007 TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especial... See More ⇒
Detailed specifications: FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , IRF9640 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 .
Keywords - FDA20N50F109 MOSFET specs
FDA20N50F109 cross reference
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FDA20N50F109 substitution
FDA20N50F109 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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