All MOSFET. FDA20N50F109 Datasheet

 

FDA20N50F109 Datasheet and Replacement


   Type Designator: FDA20N50F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO3PN
 

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FDA20N50F109 Datasheet (PDF)

 5.1. Size:611K  fairchild semi
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FDA20N50F109

October 2007UniFETTMFDA20N50FtmN-Channel MOSFET 500V, 22A, 0.26Features Description RDS(on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 50nC )stripe, DMOS technology. Low Crss ( Typ. 27pF )This advance technology has been es

 6.1. Size:740K  fairchild semi
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FDA20N50F109

July 2007TMUniFETFDA20N50 / FDA20N50_F109500V N-Channel MOSFETFeatures Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especial

Datasheet: FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , AON7403 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 .

Keywords - FDA20N50F109 MOSFET datasheet

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