FDA20N50F109 Datasheet. Specs and Replacement

Type Designator: FDA20N50F109  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO3PN

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FDA20N50F109 datasheet

 5.1. Size:611K  fairchild semi
 fda20n50f.pdf pdf_icon

FDA20N50F109

October 2007 UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26 Features Description RDS(on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 50nC ) stripe, DMOS technology. Low Crss ( Typ. 27pF ) This advance technology has been es... See More ⇒

 6.1. Size:740K  fairchild semi
 fda20n50 f109.pdf pdf_icon

FDA20N50F109

July 2007 TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especial... See More ⇒

Detailed specifications: FCPF7N60NT, STU419A, FCPF9N60NT, STU417S, FDA032N08, FDA15N65, FDA16N50F109, FDA18N50, IRF9640, FDA20N50F, FDA24N40F, STU402D, FDA24N50, FDA24N50F, FDA28N50, FDA28N50F, FDA33N25

Keywords - FDA20N50F109 MOSFET specs

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