SVT078R0ND Specs and Replacement
Type Designator: SVT078R0ND
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 92.9 nS
Cossⓘ - Output Capacitance: 323 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
SVT078R0ND substitution
- MOSFET ⓘ Cross-Reference Search
SVT078R0ND datasheet
svt078r0nd.pdf
R UMW SVT078R0ND 68V N-Channel Power Mosfet UMW SVT078R0ND General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 68V,ID =88A RDS(ON),6.3m (Typ) @ VGS =10V Low On-Resistance Low gate charge Fast switching Low reverse transfer capa... See More ⇒
svt078r0nt svt078r0ns svt078r0nstr.pdf
SVT078R0NT/S 88A 68V N 2 SVT078R0NT/S N MOS LVMOS 1 ... See More ⇒
Detailed specifications: SI2305A, SI2306A, SI2307A, SI2308A, SI2309A, SI2312A, SI2318A, SI2328A, SPP20N60C3, ST18N10D, ST2317S23RG, ST2341SRG, ST3424, ST3426, STC4301D, STC6301D, STN2610D
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK3727-01 | NCEP60T12A | BXL4001
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