SVT078R0ND Datasheet and Replacement
Type Designator: SVT078R0ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 92.9 nS
Cossⓘ - Output Capacitance: 323 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
SVT078R0ND substitution
SVT078R0ND Datasheet (PDF)
svt078r0nd.pdf
RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa
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SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1
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Datasheet: SI2305A , SI2306A , SI2307A , SI2308A , SI2309A , SI2312A , SI2318A , SI2328A , AON7410 , ST18N10D , ST2317S23RG , ST2341SRG , ST3424 , ST3426 , STC4301D , STC6301D , STN2610D .
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