ST18N10D PDF and Equivalents Search

 

ST18N10D Specs and Replacement

Type Designator: ST18N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

ST18N10D substitution

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ST18N10D datasheet

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ST18N10D

ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

Detailed specifications: SI2306A, SI2307A, SI2308A, SI2309A, SI2312A, SI2318A, SI2328A, SVT078R0ND, SKD502T, ST2317S23RG, ST2341SRG, ST3424, ST3426, STC4301D, STC6301D, STN2610D, STN4260

Keywords - ST18N10D MOSFET specs

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