All MOSFET. ST18N10D Datasheet

 

ST18N10D MOSFET. Datasheet pdf. Equivalent


   Type Designator: ST18N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45(max) nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252

 ST18N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ST18N10D Datasheet (PDF)

 ..1. Size:614K  stansontech
 st18n10d.pdf

ST18N10D ST18N10D

ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQPF3N60

 

 
Back to Top