STC6301D PDF and Equivalents Search

 

STC6301D Specs and Replacement

Type Designator: STC6301D

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO252-4L

STC6301D substitution

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STC6301D datasheet

 ..1. Size:917K  stansontech
 stc6301d.pdf pdf_icon

STC6301D

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒

 9.1. Size:409K  stansontech
 stc6332.pdf pdf_icon

STC6301D

STC6332 STC6332 STC6332 STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This d... See More ⇒

Detailed specifications: SI2328A, SVT078R0ND, ST18N10D, ST2317S23RG, ST2341SRG, ST3424, ST3426, STC4301D, IRF1010E, STN2610D, STN4260, STP4441, STP601, STP605D, STP6625, 2N7002EM3T5G, 2N7002M3T5G

Keywords - STC6301D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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