All MOSFET. STC6301D Datasheet

 

STC6301D Datasheet and Replacement


   Type Designator: STC6301D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO252-4L
 

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STC6301D Datasheet (PDF)

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STC6301D

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

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STC6301D

STC6332STC6332STC6332STC6332N&P Pair Enhancement Mode MOSFET0.95A / -1ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STC6332 is the N & P-Channel enhancement mode power field effect transistorusing high cell density DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance. This d

Datasheet: SI2328A , SVT078R0ND , ST18N10D , ST2317S23RG , ST2341SRG , ST3424 , ST3426 , STC4301D , IRF530 , STN2610D , STN4260 , STP4441 , STP601 , STP605D , STP6625 , 2N7002EM3T5G , 2N7002M3T5G .

Keywords - STC6301D MOSFET datasheet

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