STN2610D PDF and Equivalents Search

 

STN2610D Specs and Replacement

Type Designator: STN2610D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252 TO251

STN2610D substitution

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STN2610D datasheet

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STN2610D

STN2610D N Channel Enhancement Mode MOSFET 50.0A DESCRIPTION STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION l 60V/10.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS = 10V l 60V/8.0A, RDS(ON) = 12m @VGS = 4.5V l Super high density cell de... See More ⇒

Detailed specifications: SVT078R0ND, ST18N10D, ST2317S23RG, ST2341SRG, ST3424, ST3426, STC4301D, STC6301D, IRFB3607, STN4260, STP4441, STP601, STP605D, STP6625, 2N7002EM3T5G, 2N7002M3T5G, 2SK3541-P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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