All MOSFET. STN2610D Datasheet

 

STN2610D Datasheet and Replacement


   Type Designator: STN2610D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252 TO251
 

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STN2610D Datasheet (PDF)

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STN2610D

STN2610D N Channel Enhancement Mode MOSFET 50.0A DESCRIPTION STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION l 60V/10.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS = 10V l 60V/8.0A, RDS(ON) = 12m @VGS = 4.5V l Super high density cell de

Datasheet: SVT078R0ND , ST18N10D , ST2317S23RG , ST2341SRG , ST3424 , ST3426 , STC4301D , STC6301D , IRFB3607 , STN4260 , STP4441 , STP601 , STP605D , STP6625 , 2N7002EM3T5G , 2N7002M3T5G , 2SK3541-P .

History: SWF15N65D | SM7320ESQG

Keywords - STN2610D MOSFET datasheet

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