STN2610D MOSFET. Datasheet pdf. Equivalent
Type Designator: STN2610D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 63 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 29 nS
Drain-Source Capacitance (Cd): 165 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO252 TO251
STN2610D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN2610D Datasheet (PDF)
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stn2610d.pdf
stn2610d.pdf
STN2610D N Channel Enhancement Mode MOSFET 50.0A DESCRIPTION STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION l 60V/10.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS = 10V l 60V/8.0A, RDS(ON) = 12m @VGS = 4.5V l Super high density cell de
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