All MOSFET. STN4260 Datasheet

 

STN4260 Datasheet and Replacement


   Type Designator: STN4260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

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STN4260 Datasheet (PDF)

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STN4260

STN4260 N Channel Enhancement Mode MOSFET 18A DESCRIPTION STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circ

Datasheet: ST18N10D , ST2317S23RG , ST2341SRG , ST3424 , ST3426 , STC4301D , STC6301D , STN2610D , IRLZ44N , STP4441 , STP601 , STP605D , STP6625 , 2N7002EM3T5G , 2N7002M3T5G , 2SK3541-P , BSS606N-P .

History: PHM18NQ15T | IPP60R600E6

Keywords - STN4260 MOSFET datasheet

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