STN4260 Specs and Replacement
Type Designator: STN4260
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
STN4260 substitution
- MOSFET ⓘ Cross-Reference Search
STN4260 datasheet
stn4260.pdf
STN4260 N Channel Enhancement Mode MOSFET 18A DESCRIPTION STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circ... See More ⇒
Detailed specifications: ST18N10D, ST2317S23RG, ST2341SRG, ST3424, ST3426, STC4301D, STC6301D, STN2610D, AON6380, STP4441, STP601, STP605D, STP6625, 2N7002EM3T5G, 2N7002M3T5G, 2SK3541-P, BSS606N-P
Keywords - STN4260 MOSFET specs
STN4260 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STK0160 | SM3319NSQA | FCH099N60E | STD50N03L | IRFB3004G | 2SK1322 | 2N90L-TA3-T
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