STN4260 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN4260
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
STN4260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN4260 Datasheet (PDF)
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stn4260.pdf
stn4260.pdf
STN4260 N Channel Enhancement Mode MOSFET 18A DESCRIPTION STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circ
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