All MOSFET. FDA33N25 Datasheet

 

FDA33N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDA33N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO3PN

 FDA33N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA33N25 Datasheet (PDF)

 ..1. Size:643K  fairchild semi
 fda33n25.pdf

FDA33N25 FDA33N25

September 2007UniFETTMFDA33N25tmN-Channel MOSFET 250V, 33A, 0.094Features Description RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 36nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been

Datasheet: FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , NCEP15T14 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 .

 

 
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