All MOSFET. FDA33N25 Datasheet

 

FDA33N25 Datasheet and Replacement


   Type Designator: FDA33N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO3PN
 

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FDA33N25 Datasheet (PDF)

 ..1. Size:643K  fairchild semi
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FDA33N25

September 2007UniFETTMFDA33N25tmN-Channel MOSFET 250V, 33A, 0.094Features Description RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 36nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been

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History: PMBF4391

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