FDA33N25 Specs and Replacement
Type Designator: FDA33N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
Package: TO3PN
FDA33N25 substitution
- MOSFET ⓘ Cross-Reference Search
FDA33N25 datasheet
fda33n25.pdf
September 2007 UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094 Features Description RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 36nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been... See More ⇒
Detailed specifications: FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , AO4407A , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 .
Keywords - FDA33N25 MOSFET specs
FDA33N25 cross reference
FDA33N25 equivalent finder
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FDA33N25 substitution
FDA33N25 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STP53N06 | STP50N06L
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