All MOSFET. BSS606N-P Datasheet

 

BSS606N-P Datasheet and Replacement


   Type Designator: BSS606N-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT89
 

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BSS606N-P Datasheet (PDF)

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BSS606N-P

 7.1. Size:410K  infineon
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BSS606N-P

BSS606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 3.2 A Avalanche rated Qualified according to AEC Q101PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant4 1 2 3 Type Package Tape and Reel Information Marking Halog

 9.1. Size:62K  comset
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BSS606N-P

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu

Datasheet: STN4260 , STP4441 , STP601 , STP605D , STP6625 , 2N7002EM3T5G , 2N7002M3T5G , 2SK3541-P , AO4407 , DMP21D0UFB4-P , NTJD5121NT1G , PCJ3139K , PDMN66D0LDW , PNTK3139PT5G , PRHP020N06 , PRZM002P02T2L , PUM6K31N .

History: SIJ482DP | STW70N60DM2 | AP4528GH | PDMN66D0LDW | PJM3401PSA | PJM3401PSC | AP3C023AMT

Keywords - BSS606N-P MOSFET datasheet

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 BSS606N-P equivalent finder
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 BSS606N-P replacement

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