BSS606N-P MOSFET Datasheet: N-Ch, 60V, 3.5A. Full specification with pinout and replacement list

BSS606N-P Specs and Replacement

Type Designator: BSS606N-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT89

BSS606N-P substitution

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BSS606N-P datasheet

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BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS 60 V N-channel RDS(on),max VGS=10 V 60 mW Enhancement mode VGS=4.5 V 90 Logic level (4.5V rated) ID 3.2 A Avalanche rated Qualified according to AEC Q101 PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant 4 1 2 3 Type Package Tape and Reel Information Marking Halog... See More ⇒

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NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu... See More ⇒

Detailed specifications: STN4260, STP4441, STP601, STP605D, STP6625, 2N7002EM3T5G, 2N7002M3T5G, 2SK3541-P, AO4407, DMP21D0UFB4-P, NTJD5121NT1G, PCJ3139K, PDMN66D0LDW, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N