NTJD5121NT1G MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

NTJD5121NT1G Specs and Replacement

Type Designator: NTJD5121NT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: SOT363

NTJD5121NT1G substitution

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NTJD5121NT1G datasheet

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5.1. Size:111K onsemi
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NTJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features Low RDS(on) http //onsemi.com http //onsemi.com Low Gate Threshold Low Input Capacitance V(BR)DSS RDS(on) MAX ID Max ESD Protected Gate 1.6 W @ 10 V 295 mA This is a Pb-Free Device 60 V 2.5 W @ 4.5 V Applications Low Side Load Switch SC-88 (SOT-363) DC-DC Conver... See More ⇒

5.2. Size:69K onsemi
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NTJD5121N, NVJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features Low RDS(on) www.onsemi.com www.onsemi.com Low Gate Threshold Low Input Capacitance V(BR)DSS RDS(on) MAX ID Max ESD Protected Gate 1.6 W @ 10 V 295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V 2.5 W @ 4.5 V Site and Control Change Requ... See More ⇒

Detailed specifications: STP601, STP605D, STP6625, 2N7002EM3T5G, 2N7002M3T5G, 2SK3541-P, BSS606N-P, DMP21D0UFB4-P, 4N60, PCJ3139K, PDMN66D0LDW, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL