All MOSFET. NTJD5121NT1G Datasheet

 

NTJD5121NT1G Datasheet and Replacement


   Type Designator: NTJD5121NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOT363
 

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NTJD5121NT1G Datasheet (PDF)

 ..1. Size:1935K  cn tech public
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NTJD5121NT1G

V2.5

 5.1. Size:111K  onsemi
 ntjd5121n.pdf pdf_icon

NTJD5121NT1G

NTJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)http://onsemi.comhttp://onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA This is a Pb-Free Device 60 V2.5 W @ 4.5 VApplications Low Side Load SwitchSC-88 (SOT-363) DC-DC Conver

 5.2. Size:69K  onsemi
 ntjd5121n nvjd5121n.pdf pdf_icon

NTJD5121NT1G

NTJD5121N, NVJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)www.onsemi.comwww.onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V2.5 W @ 4.5 VSite and Control Change Requ

Datasheet: STP601 , STP605D , STP6625 , 2N7002EM3T5G , 2N7002M3T5G , 2SK3541-P , BSS606N-P , DMP21D0UFB4-P , 10N65 , PCJ3139K , PDMN66D0LDW , PNTK3139PT5G , PRHP020N06 , PRZM002P02T2L , PUM6K31N , TPAO5401EL , TPAO5404EL .

History: SI1442DH | ISL9N310AD3ST | APT50M65B2LLG | IXTX20N140 | IPB085N06LG | FQB19N20LTM | HSW6604

Keywords - NTJD5121NT1G MOSFET datasheet

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