FDA38N30 Datasheet and Replacement
Type Designator: FDA38N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO3PN
FDA38N30 substitution
FDA38N30 Datasheet (PDF)
fda38n30.pdf

May 2010UniFETTMFDA38N30N-Channel MOSFET300V, 38A, 0.085Features Description RDS(on) = 0.07 ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 60 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been esp
Datasheet: FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , AO4468 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 .
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History: US5U3



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