FDA38N30 PDF and Equivalents Search

 

FDA38N30 Specs and Replacement

Type Designator: FDA38N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO3PN

FDA38N30 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDA38N30 datasheet

 ..1. Size:445K  fairchild semi
 fda38n30.pdf pdf_icon

FDA38N30

May 2010 UniFETTM FDA38N30 N-Channel MOSFET 300V, 38A, 0.085 Features Description RDS(on) = 0.07 ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 60 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been esp... See More ⇒

Detailed specifications: FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , 60N06 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 .

History: FQU13N06L | FDA20N50F | STP53N05

Keywords - FDA38N30 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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