PDMN66D0LDW Specs and Replacement
Type Designator: PDMN66D0LDW
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT363
PDMN66D0LDW substitution
- MOSFET ⓘ Cross-Reference Search
PDMN66D0LDW datasheet
Detailed specifications: STP6625, 2N7002EM3T5G, 2N7002M3T5G, 2SK3541-P, BSS606N-P, DMP21D0UFB4-P, NTJD5121NT1G, PCJ3139K, IRF1407, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL, TPCJ1012, TPCJ2101
Keywords - PDMN66D0LDW MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQP630 | AOC3864 | SM2604NSC | NTR1P02LT1G | AUIRF7342Q | SI1539CDL-T1 | IRF7379Q
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