TPAO5401EL Specs and Replacement
Type Designator: TPAO5401EL
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 6 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT523
TPAO5401EL substitution
- MOSFET ⓘ Cross-Reference Search
TPAO5401EL datasheet
tpao5401el.pdf
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tpao5404el.pdf
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Detailed specifications: DMP21D0UFB4-P, NTJD5121NT1G, PCJ3139K, PDMN66D0LDW, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, SI2302, TPAO5404EL, TPCJ1012, TPCJ2101, TPCJ2102, TPDMN26D0UFB4, TPDMP2160UW, TPM1012ER3, TPM1012R3
Keywords - TPAO5401EL MOSFET specs
TPAO5401EL cross reference
TPAO5401EL equivalent finder
TPAO5401EL pdf lookup
TPAO5401EL substitution
TPAO5401EL replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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