TPCJ1012 Specs and Replacement
Type Designator: TPCJ1012
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 20 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT523
TPCJ1012 substitution
- MOSFET ⓘ Cross-Reference Search
TPCJ1012 datasheet
tpcj1012.pdf
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Detailed specifications: PCJ3139K, PDMN66D0LDW, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL, 18N50, TPCJ2101, TPCJ2102, TPDMN26D0UFB4, TPDMP2160UW, TPM1012ER3, TPM1012R3, TPM1013ER3, TPM2008EP3
Keywords - TPCJ1012 MOSFET specs
TPCJ1012 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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