TPCJ2102 Specs and Replacement
Type Designator: TPCJ2102
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT323
TPCJ2102 substitution
- MOSFET ⓘ Cross-Reference Search
TPCJ2102 datasheet
Detailed specifications: PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL, TPCJ1012, TPCJ2101, IRF520, TPDMN26D0UFB4, TPDMP2160UW, TPM1012ER3, TPM1012R3, TPM1013ER3, TPM2008EP3, TPM2008EP3-A, TPM2008P3
Keywords - TPCJ2102 MOSFET specs
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