All MOSFET. TPM2009EP3 Datasheet

 

TPM2009EP3 Datasheet and Replacement


   Type Designator: TPM2009EP3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: DFN1006-3L
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TPM2009EP3 Datasheet (PDF)

 ..1. Size:806K  cn tech public
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TPM2009EP3

 8.1. Size:798K  cn tech public
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TPM2009EP3

TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ

 8.2. Size:1699K  cn tech public
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TPM2009EP3

 8.3. Size:1003K  cn tech public
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TPM2009EP3

TPM2008 EP3-AN-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Packagewww.sot23.com.tw Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive www.sot23.com.twElectronics ESD Protectedwww.sot23.com.tw Logic Level Shift

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History: TK2P60D | IRFBG20

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