TPM2101BC3 PDF and Equivalents Search

 

TPM2101BC3 Specs and Replacement

Type Designator: TPM2101BC3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT323

TPM2101BC3 substitution

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TPM2101BC3 datasheet

 ..1. Size:5092K  cn tech public
 tpm2101bc3.pdf pdf_icon

TPM2101BC3

TPM21 01 B C3 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications V -20V DS Battery protection I -2.0A D Load switch R ( at V =-4.5V) 130 mohm DS(ON) GS Power management R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GS D S G SOT323 Absolute Maximum Ratings (TA=25 C unless otherwise... See More ⇒

 8.1. Size:4545K  cn tech public
 tpm2102bc3.pdf pdf_icon

TPM2101BC3

TPM21 02B C3 N-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications V 20V DS Battery protection I 2.5A D Load switch R ( at V =4.5V) 70 mohm DS(ON) GS Power management R ( at V =2.5V) 98 mohm DS(ON) GS D D S G G SOT323 S Absolute Maximum Ratings (TA=25 C unless otherwise specified) Parameter Symbol Limit Unit Dr... See More ⇒

Detailed specifications: TPM1013ER3, TPM2008EP3, TPM2008EP3-A, TPM2008P3, TPM2009EP3, TPM2019-3, TPM2030-3, TPM2077, IRFZ48N, TPM2102BC3, TPM2601C3, TPM3008EP3, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, TPM5121NEC6

Keywords - TPM2101BC3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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