TPM6401S3 Specs and Replacement
Type Designator: TPM6401S3
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 81 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT23
TPM6401S3 substitution
- MOSFET ⓘ Cross-Reference Search
TPM6401S3 datasheet
tpm6401s3.pdf
TPM6 4 01 S3 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications VDS=-16V,ID=-3.8A Battery protection RDS(ON)... See More ⇒
Detailed specifications: TPM3008EP3, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, TPM5121NEC6, TPM603NT3, TPM62D0LFB, AOD4184A, TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6, TPM9665D6, TPNTA4151PT1G, TPNTA4153NT1G
Keywords - TPM6401S3 MOSFET specs
TPM6401S3 cross reference
TPM6401S3 equivalent finder
TPM6401S3 pdf lookup
TPM6401S3 substitution
TPM6401S3 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198 | 2sc1971 | tip41c transistor datasheet | 2n3907 | 12n60