TPM6401S3 Datasheet and Replacement
Type Designator: TPM6401S3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT23
TPM6401S3 substitution
TPM6401S3 Datasheet (PDF)
tpm6401s3.pdf
TPM6 4 01 S3P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications VDS=-16V,ID=-3.8A Battery protection RDS(ON)
Datasheet: TPM3008EP3 , TPM3134NX3 , TPM3139K , TPM4105EC6 , TPM4153-3 , TPM5121NEC6 , TPM603NT3 , TPM62D0LFB , HY1906P , TPM7002BKM , TPM7002DFN3 , TPM7002ER3 , TPM8205ATS6 , TPM8205TS6 , TPM9665D6 , TPNTA4151PT1G , TPNTA4153NT1G .
History: MPSP60M160 | SUD50N03-12P | PD5P8BA | BSC010N04LSI | PA567EA | SSM6J207FE | ME6980ED-G
Keywords - TPM6401S3 MOSFET datasheet
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History: MPSP60M160 | SUD50N03-12P | PD5P8BA | BSC010N04LSI | PA567EA | SSM6J207FE | ME6980ED-G
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