All MOSFET. FDA69N25 Datasheet

 

FDA69N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDA69N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 480 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 69 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 77 nC

Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm

Package: TO3PN

FDA69N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA69N25 Datasheet (PDF)

1.1. fda69n25.pdf Size:720K _fairchild_semi

FDA69N25
FDA69N25

May 2006 TM UniFET FDA69N25 250V N-Channel MOSFET Features Description • 69A, 250V, RDS(on) = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 77 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 84pF) This advanced technology has been especially tailored to •

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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