FDA69N25 PDF and Equivalents Search

 

FDA69N25 Specs and Replacement

Type Designator: FDA69N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO3PN

FDA69N25 substitution

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FDA69N25 datasheet

 ..1. Size:720K  fairchild semi
 fda69n25.pdf pdf_icon

FDA69N25

May 2006 TM UniFET FDA69N25 250V N-Channel MOSFET Features Description 69A, 250V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 77 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 84pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , IRFZ44N , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 .

History: KI2337DS

Keywords - FDA69N25 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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