All MOSFET. FDA69N25 Datasheet

 

FDA69N25 Datasheet and Replacement


   Type Designator: FDA69N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO3PN
 

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FDA69N25 Datasheet (PDF)

 ..1. Size:720K  fairchild semi
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FDA69N25

May 2006 TMUniFETFDA69N25250V N-Channel MOSFETFeatures Description 69A, 250V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 77 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 84pF)This advanced technology has been especially tailored to

Datasheet: FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , IRFZ44N , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 .

History: SIHA11N80E | SUP70040E | 2SK2807-01L | 22N65 | CMI80N06 | 2N65 | SUP85N03-07P

Keywords - FDA69N25 MOSFET datasheet

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