TPNTA4151PT1G Specs and Replacement
Type Designator: TPNTA4151PT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 6 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
Package: SOT523
TPNTA4151PT1G substitution
- MOSFET ⓘ Cross-Reference Search
TPNTA4151PT1G datasheet
Detailed specifications: TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6, TPM9665D6, IRF3205, TPNTA4153NT1G, TPNTJD4105CT1G, TPNTK3134NT1G, TPNTK3139PT1G, TPNTS4101PT1G, UT8205AG-AG6, ZXMN6A11ZTA-P, CS10N70FA9R
Keywords - TPNTA4151PT1G MOSFET specs
TPNTA4151PT1G cross reference
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TPNTA4151PT1G substitution
TPNTA4151PT1G replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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