TPNTS4101PT1G MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPNTS4101PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323

TPNTS4101PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS