TPNTS4101PT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: TPNTS4101PT1G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 125 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT323
TPNTS4101PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPNTS4101PT1G Datasheet (PDF)
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tpnts4101pt1g.pdf
tpnts4101pt1g.pdf
TPNTS4 1 01 PT1 GP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPNTS4101PT1G 3000 7DSGSOT-323Absolute Maximum Ratings (TA=
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