All MOSFET. TPNTS4101PT1G Datasheet

 

TPNTS4101PT1G Datasheet and Replacement


   Type Designator: TPNTS4101PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
 

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TPNTS4101PT1G Datasheet (PDF)

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TPNTS4101PT1G

TPNTS4 1 01 PT1 GP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPNTS4101PT1G 3000 7DSGSOT-323Absolute Maximum Ratings (TA=

Datasheet: TPM8205ATS6 , TPM8205TS6 , TPM9665D6 , TPNTA4151PT1G , TPNTA4153NT1G , TPNTJD4105CT1G , TPNTK3134NT1G , TPNTK3139PT1G , IRF540N , UT8205AG-AG6 , ZXMN6A11ZTA-P , CS10N70FA9R , ME2310 , ME9926 , J330 , K3150 , K4018 .

History: AOL1482 | 2SK222 | STLT29 | IXTQ240N055T | AOB66916L | 6N70KG-TND-R | APT8035JN

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