TPNTS4101PT1G PDF and Equivalents Search

 

TPNTS4101PT1G Specs and Replacement

Type Designator: TPNTS4101PT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

TPNTS4101PT1G substitution

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TPNTS4101PT1G datasheet

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TPNTS4101PT1G

TPNTS4 1 01 PT1 G P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPNTS4101PT1G 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=... See More ⇒

Detailed specifications: TPM8205ATS6, TPM8205TS6, TPM9665D6, TPNTA4151PT1G, TPNTA4153NT1G, TPNTJD4105CT1G, TPNTK3134NT1G, TPNTK3139PT1G, IRF540, UT8205AG-AG6, ZXMN6A11ZTA-P, CS10N70FA9R, ME2310, ME9926, J330, K3150, K4018

Keywords - TPNTS4101PT1G MOSFET specs

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