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FDA70N20 Spec and Replacement


   Type Designator: FDA70N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO3PN

 FDA70N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA70N20 Specs

 ..1. Size:592K  fairchild semi
 fda70n20.pdf pdf_icon

FDA70N20

TM UniFET FDA70N20 200V N-Channel MOSFET Features Description 70A, 200V, RDS(on) = 0.035 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 66 nC) DMOS technology. Low Crss ( typical 89 pF) This advanced technology has been especially tailored to mini- ... See More ⇒

Detailed specifications: FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , IRF3205 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 .

Keywords - FDA70N20 MOSFET specs

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