FDA70N20 Datasheet and Replacement
Type Designator: FDA70N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 66 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO3PN
FDA70N20 substitution
FDA70N20 Datasheet (PDF)
fda70n20.pdf

TMUniFETFDA70N20200V N-Channel MOSFETFeatures Description 70A, 200V, RDS(on) = 0.035 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 66 nC)DMOS technology. Low Crss ( typical 89 pF)This advanced technology has been especially tailored to mini-
Datasheet: FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , IRF3205 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 .
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History: STU802S | BF995



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