FDA70N20 Datasheet. Specs and Replacement

Type Designator: FDA70N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO3PN

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FDA70N20 datasheet

 ..1. Size:592K  fairchild semi
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FDA70N20

TM UniFET FDA70N20 200V N-Channel MOSFET Features Description 70A, 200V, RDS(on) = 0.035 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 66 nC) DMOS technology. Low Crss ( typical 89 pF) This advanced technology has been especially tailored to mini- ... See More ⇒

Detailed specifications: FDA28N50, FDA28N50F, FDA33N25, FDA38N30, FDA50N50, FDA59N25, FDA59N30, FDA69N25, IRF3205, STU404D, FDA8440, FDB016N04AL7, FDB024N04AL7, FDB024N06, FDB029N06, FDB031N08, FDB035AN06A0

Keywords - FDA70N20 MOSFET specs

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