ME9926 PDF and Equivalents Search

 

ME9926 Specs and Replacement

Type Designator: ME9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO8

ME9926 substitution

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ME9926 datasheet

 ..1. Size:841K  cn vbsemi
 me9926.pdf pdf_icon

ME9926

ME9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 ... See More ⇒

Detailed specifications: TPNTJD4105CT1G, TPNTK3134NT1G, TPNTK3139PT1G, TPNTS4101PT1G, UT8205AG-AG6, ZXMN6A11ZTA-P, CS10N70FA9R, ME2310, IRF1404, J330, K3150, K4018, MMBF170LT1G, MMDF3N04HD, MCH3409-TL, KD2306A, KD2310

Keywords - ME9926 MOSFET specs

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