All MOSFET. ME9926 Datasheet

 

ME9926 Datasheet and Replacement


   Type Designator: ME9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
 

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ME9926 Datasheet (PDF)

 ..1. Size:841K  cn vbsemi
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ME9926

ME9926www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

Datasheet: TPNTJD4105CT1G , TPNTK3134NT1G , TPNTK3139PT1G , TPNTS4101PT1G , UT8205AG-AG6 , ZXMN6A11ZTA-P , CS10N70FA9R , ME2310 , IRF1404 , J330 , K3150 , K4018 , MMBF170LT1G , MMDF3N04HD , MCH3409-TL , KD2306A , KD2310 .

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