MMBF170LT1G PDF and Equivalents Search

 

MMBF170LT1G Specs and Replacement

Type Designator: MMBF170LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: SOT23

MMBF170LT1G substitution

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MMBF170LT1G datasheet

 ..1. Size:1611K  cn vbsemi
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MMBF170LT1G

MMBF170LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G... See More ⇒

 4.1. Size:102K  motorola
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MMBF170LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti... See More ⇒

 4.2. Size:98K  motorola
mmbf170lt1rev2d.pdf pdf_icon

MMBF170LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti... See More ⇒

 4.3. Size:77K  onsemi
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MMBF170LT1G

MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http //onsemi.com Pb-Free Packages are Available 500 mA, 60 V MAXIMUM RATINGS RDS(on) = 5 W Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc SOT-23 CASE 318 Gate-Source Voltage STYLE 21 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Curre... See More ⇒

Detailed specifications: UT8205AG-AG6, ZXMN6A11ZTA-P, CS10N70FA9R, ME2310, ME9926, J330, K3150, K4018, IRFP260N, MMDF3N04HD, MCH3409-TL, KD2306A, KD2310, KD3400SRG, IRLU110P, IRLU3103P, IRLU3410P

Keywords - MMBF170LT1G MOSFET specs

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