MMBF170LT1G - описание и поиск аналогов

MMBF170LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti

MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http //onsemi.com Pb-Free Packages are Available 500 mA, 60 V MAXIMUM RATINGS RDS(on) = 5 W Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc SOT-23 CASE 318 Gate-Source Voltage STYLE 21 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Curre