MDD1653RH Datasheet and Replacement
Type Designator: MDD1653RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 525 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm
Package: TO252
MDD1653RH substitution
MDD1653RH Datasheet (PDF)
mdd1653rh.pdf

MDD1653RHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL
mdd1654.pdf

MDD1654 30V N-channel Trench MOSFET : 30V, 55A, 6.0m General Description Features The MDD1654 uses advanced Magnachips VDS = 30V ID = 55A @VGS = 10V MOSFET Technology, which provides high performance in on-state resistance, fast switching RDS(ON) performance and excellent quality. MDD1654 is
Datasheet: K3569-FP , K4145 , KD2301 , KD3422A , KD4953 , LR024N , LR8103V , LU120N , 2SK3568 , MDU2657RH , MDV1595SU , ME20N10 , ME4410 , MEM2301 , MEM2302 , MI4800 , MMBF0201NLT1G .
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