MDU2657RH Datasheet and Replacement
Type Designator: MDU2657RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 425 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071(typ) Ohm
Package: DFN5X6
MDU2657RH substitution
MDU2657RH Datasheet (PDF)
mdu2657rh.pdf
MDU2657RHwww.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S
Datasheet: K4145 , KD2301 , KD3422A , KD4953 , LR024N , LR8103V , LU120N , MDD1653RH , IRF9540N , MDV1595SU , ME20N10 , ME4410 , MEM2301 , MEM2302 , MI4800 , MMBF0201NLT1G , MMDF3P03HDR .
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