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MI4800 Specs and Replacement

Type Designator: MI4800

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0224 typ Ohm

Package: SO8

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MI4800 datasheet

 ..1. Size:303K  cn vbsemi
 mi4800.pdf pdf_icon

MI4800

MI4800 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

Detailed specifications: LU120N, MDD1653RH, MDU2657RH, MDV1595SU, ME20N10, ME4410, MEM2301, MEM2302, 5N65, MMBF0201NLT1G, MMDF3P03HDR, MT2300ACTR, MT4435ACTR, MT4606, MT6680, MTD20N03HDLT4G, MTD20N06HDLT4G

Keywords - MI4800 MOSFET specs

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