All MOSFET. MI4800 Datasheet

 

MI4800 Datasheet and Replacement


   Type Designator: MI4800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0224(typ) Ohm
   Package: SO8
 

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MI4800 Datasheet (PDF)

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MI4800

MI4800www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: LU120N , MDD1653RH , MDU2657RH , MDV1595SU , ME20N10 , ME4410 , MEM2301 , MEM2302 , IRF4905 , MMBF0201NLT1G , MMDF3P03HDR , MT2300ACTR , MT4435ACTR , MT4606 , MT6680 , MTD20N03HDLT4G , MTD20N06HDLT4G .

History: MMBF0201NLT1G | TK20N60W | AONS66641T | BLF7G27L-90P | VT6J1 | LSF80R980GT | AO6601

Keywords - MI4800 MOSFET datasheet

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