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MT6680 Specs and Replacement

Type Designator: MT6680

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 typ Ohm

Package: SO8

MT6680 substitution

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MT6680 datasheet

 ..1. Size:834K  cn vbsemi
 mt6680.pdf pdf_icon

MT6680

MT6680 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒

Detailed specifications: MEM2301, MEM2302, MI4800, MMBF0201NLT1G, MMDF3P03HDR, MT2300ACTR, MT4435ACTR, MT4606, NCEP15T14, MTD20N03HDLT4G, MTD20N06HDLT4G, MTD3055EL, MTP60N06HD, MTP8N06, N3PF06, NCE0117, NCE3010S

Keywords - MT6680 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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