All MOSFET. MT6680 Datasheet

 

MT6680 Datasheet and Replacement


   Type Designator: MT6680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: SO8
 

 MT6680 substitution

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MT6680 Datasheet (PDF)

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MT6680

MT6680www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

Datasheet: MEM2301 , MEM2302 , MI4800 , MMBF0201NLT1G , MMDF3P03HDR , MT2300ACTR , MT4435ACTR , MT4606 , NCEP15T14 , MTD20N03HDLT4G , MTD20N06HDLT4G , MTD3055EL , MTP60N06HD , MTP8N06 , N3PF06 , NCE0117 , NCE3010S .

History: CS100N03B8 | CMU12N10

Keywords - MT6680 MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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