All MOSFET. MTD20N06HDLT4G Datasheet

 

MTD20N06HDLT4G Datasheet and Replacement


   Type Designator: MTD20N06HDLT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031(typ) Ohm
   Package: TO252
 

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MTD20N06HDLT4G Datasheet (PDF)

 ..1. Size:771K  cn vbsemi
 mtd20n06hdlt4g.pdf pdf_icon

MTD20N06HDLT4G

MTD20N06HDLT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

 3.1. Size:253K  motorola
 mtd20n06hdl.pdf pdf_icon

MTD20N06HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAbt MTD20N06HDL/DAdvance InformationMTD20N06HDLHDTMOS E-FET Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface Mount orLOGIC LEVELInsertion Mount20 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.045 OHMThis advanced highcell density HDTMOS EFET is de

 4.1. Size:293K  motorola
 mtd20n06hd.pdf pdf_icon

MTD20N06HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAbt MTD20N06HDL/DAdvance InformationMTD20N06HDLHDTMOS E-FET Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface Mount orLOGIC LEVELInsertion Mount20 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.045 OHMThis advanced highcell density HDTMOS EFET is de

 5.1. Size:274K  motorola
 mtd20n06h.pdf pdf_icon

MTD20N06HDLT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N06HD/DDesigner's Data SheetMTD20N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET20 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.045 OHMhigh energy in the

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Datasheet: MI4800 , MMBF0201NLT1G , MMDF3P03HDR , MT2300ACTR , MT4435ACTR , MT4606 , MT6680 , MTD20N03HDLT4G , 20N50 , MTD3055EL , MTP60N06HD , MTP8N06 , N3PF06 , NCE0117 , NCE3010S , NCE3035G , NCE3080KA .

History: RU6055R | IRFR7746PBF | IRFR3303PBF | IRFB4310PBF | SSF6NS70F | IRFB4110GPBF | SJMN600R70MF

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