NIF5002NT1G Datasheet and Replacement. Cross Reference Search

NIF5002NT1G Datasheet (PDF)

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NIF5002NT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

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NIF5002NT3Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

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NIF5002NPreferred DeviceSelf-Protected FETwith Temperature and Current Limit42 V, 2.0 A, Single N-Channel, SOT-223http://onsemi.comHDPlust devices are an advanced series of power MOSFETsV(BR)DSSwhich utilize ON Semiconductors latest MOSFET technology processRDS(ON) TYPID MAX(Clamped)to achieve the lowest possible on-resistance per silicon area while42 V165 mW @ 10

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NIF5003NPreferred DeviceSelf-Protected FETwith Temperature and Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comhttp://onsemi.comHDPlus devices are an advanced series of power MOSFETs whichutilize ON Semiconductors latest MOSFET technology process toVDSS ID MAXachieve the lowest possible on-resistance per silicon area whileRDS(on) TYP(Clamped) (Lim

Datasheet: NCE4606 , NCE4953 , NCE55P04S , NCE55P05S , NCE60P25K , NDS331N-NL , NDS332P-NL , NDS9948-NL , IRF830 , NIF5002NT3G , NT2955G , NTB25P06T4G , NTD12N10-1G , NTD20N06LT4G , NTD2955T4G , NTD2955VT4G , NTD4860NT4G .