NIF5002NT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NIF5002NT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076(typ) Ohm
Package: SOT223
NIF5002NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NIF5002NT1G Datasheet (PDF)
nif5002nt1g.pdf
NIF5002NT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl
nif5002nt3g.pdf
NIF5002NT3Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl
nif5002n-d.pdf
NIF5002NPreferred DeviceSelf-Protected FETwith Temperature and Current Limit42 V, 2.0 A, Single N-Channel, SOT-223http://onsemi.comHDPlust devices are an advanced series of power MOSFETsV(BR)DSSwhich utilize ON Semiconductors latest MOSFET technology processRDS(ON) TYPID MAX(Clamped)to achieve the lowest possible on-resistance per silicon area while42 V165 mW @ 10
nif5003n.pdf
NIF5003NPreferred DeviceSelf-Protected FETwith Temperature and Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comhttp://onsemi.comHDPlus devices are an advanced series of power MOSFETs whichutilize ON Semiconductors latest MOSFET technology process toVDSS ID MAXachieve the lowest possible on-resistance per silicon area whileRDS(on) TYP(Clamped) (Lim
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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