NTD12N10-1G MOSFET Datasheet: N-Ch, 100V, 15A. Full specification with pinout and replacement list

NTD12N10-1G Specs and Replacement

Type Designator: NTD12N10-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 typ Ohm

Package: TO251

NTD12N10-1G substitution

- MOSFET ⓘ Cross-Reference Search

NTD12N10-1G datasheet

..1. Size:867K cn vbsemi
ntd12n10-1g.pdf pdf_icon

NTD12N10-1G www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi... See More ⇒

6.1. Size:155K onsemi
ntd12n10g ntd12n10t4.pdf pdf_icon

NTD12N10 Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK http //onsemi.com Features Source-to-Drain Diode Recovery Time Comparable to a Discrete V(BR)DSS RDS(on) TYP ID MAX Fast Recovery Diode 100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature N-Channel Mounting Information Provided for the DPAK Pac... See More ⇒

6.2. Size:158K onsemi
ntd12n10.pdf pdf_icon