NTS2101PT1G Specs and Replacement
Type Designator: NTS2101PT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 typ Ohm
Package: SC70
NTS2101PT1G substitution
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NTS2101PT1G datasheet
nts2101pt1g.pdf
NTS2101PT1G www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv... See More ⇒
nts2101p-d nts2101pt1.pdf
NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High ... See More ⇒
nts2101p.pdf
NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High ... See More ⇒
Detailed specifications: NTD5865NL-1G, NTD5865NLT4G, NTD6416ANT, NTE4153NT1G, NTF3055-100T, NTMD3P03R2G, NTR0202PLT1G, NTR4502PT1G, RU7088R, NTS4101PT1G, P0603BVG, P120NF10, P60NF06, P80NF55-08, PHB32N06, PHD78NQ03L, PHK12NQ03L
Keywords - NTS2101PT1G MOSFET specs
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