NTS2101PT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTS2101PT1G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.3 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08(typ) Ohm
Package: SC70
NTS2101PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTS2101PT1G Datasheet (PDF)
nts2101pt1g.pdf
NTS2101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv
nts2101p-d nts2101pt1.pdf
NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High
nts2101p.pdf
NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
