NTS2101PT1G - описание и поиск аналогов

NTS2101PT1G www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv

NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High

NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High