All MOSFET. PHK12NQ03L Datasheet

 

PHK12NQ03L Datasheet and Replacement


   Type Designator: PHK12NQ03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
   Package: SO8
 

 PHK12NQ03L substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHK12NQ03L Datasheet (PDF)

 ..1. Size:823K  cn vbsemi
 phk12nq03l.pdf pdf_icon

PHK12NQ03L

PHK12NQ03Lwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: NTS2101PT1G , NTS4101PT1G , P0603BVG , P120NF10 , P60NF06 , P80NF55-08 , PHB32N06 , PHD78NQ03L , IRFZ44N , RFD15P05SM , RFP6P08 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 .

History: WMK11N65SR

Keywords - PHK12NQ03L MOSFET datasheet

 PHK12NQ03L cross reference
 PHK12NQ03L equivalent finder
 PHK12NQ03L lookup
 PHK12NQ03L substitution
 PHK12NQ03L replacement

 

 
Back to Top

 


 
.