All MOSFET. RFP6P08 Datasheet

 

RFP6P08 Datasheet and Replacement


   Type Designator: RFP6P08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 11.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1671(typ) Ohm
   Package: TO220AB
 

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RFP6P08 Datasheet (PDF)

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RFP6P08

RFP6P08www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switch

Datasheet: P0603BVG , P120NF10 , P60NF06 , P80NF55-08 , PHB32N06 , PHD78NQ03L , PHK12NQ03L , RFD15P05SM , IRF740 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 , SI1555DL-T1 , SI1967DH-T1-GE3 .

History: G06N10 | UJ0100 | STD120N4LF6 | IRF5803 | CPC3701C | CRJF390N65GC | TMPF8N25Z

Keywords - RFP6P08 MOSFET datasheet

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