RFP6P08 PDF and Equivalents Search

 

RFP6P08 Specs and Replacement

Type Designator: RFP6P08

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1671 typ Ohm

Package: TO220AB

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RFP6P08 datasheet

 ..1. Size:324K  cn vbsemi
 rfp6p08.pdf pdf_icon

RFP6P08

RFP6P08 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Switch... See More ⇒

Detailed specifications: P0603BVG, P120NF10, P60NF06, P80NF55-08, PHB32N06, PHD78NQ03L, PHK12NQ03L, RFD15P05SM, IRF740, RJK0822SPN, RRS130N03, RSS100N03T, SDM4953A, SI1539CDL-T1, SI1553CDL-T1-GE3, SI1555DL-T1, SI1967DH-T1-GE3

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