SI1539CDL-T1 PDF and Equivalents Search

 

SI1539CDL-T1 Specs and Replacement

Type Designator: SI1539CDL-T1

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.090 typ Ohm

Package: SC70-6

SI1539CDL-T1 substitution

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SI1539CDL-T1 datasheet

 ..1. Size:889K  cn vbsemi
 si1539cdl-t1.pdf pdf_icon

SI1539CDL-T1

SI1539CDL-T1 www.VBsemi.tw N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs 1.8 V Rated N-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package 0.130 at VGS = 1.8 V 1.50 Fast Switching 0.155 at VGS = - 4.5 ... See More ⇒

 5.1. Size:238K  vishay
 si1539cdl.pdf pdf_icon

SI1539CDL-T1

Si1539CDL Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.388 at VGS = 10 V 0.7 TrenchFET Power MOSFET N-Channel 30 0.55 0.525 at VGS = 4.5 V 0.6 100 % Rg Tested 0.890 at VGS = - 10 V - 0.5 P-Channel - 30 0.8 APPLICATIONS 1.7 at VGS = - 4.5 ... See More ⇒

Detailed specifications: PHD78NQ03L, PHK12NQ03L, RFD15P05SM, RFP6P08, RJK0822SPN, RRS130N03, RSS100N03T, SDM4953A, 50N06, SI1553CDL-T1-GE3, SI1555DL-T1, SI1967DH-T1-GE3, SI2300BDS-T1-GE3, SI2300DS-T1-GE3, SI2301ADS-T1, SI2301BDS-T1-GE3, SI2301CDS-T1

Keywords - SI1539CDL-T1 MOSFET specs

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