All MOSFET. SI1539CDL-T1 Datasheet

 

SI1539CDL-T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1539CDL-T1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.25 nC
   trⓘ - Rise Time: 22 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.090(typ) Ohm
   Package: SC70-6

 SI1539CDL-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1539CDL-T1 Datasheet (PDF)

 ..1. Size:889K  cn vbsemi
si1539cdl-t1.pdf

SI1539CDL-T1
SI1539CDL-T1

SI1539CDL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5

 5.1. Size:238K  vishay
si1539cdl.pdf

SI1539CDL-T1
SI1539CDL-T1

Si1539CDLVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.388 at VGS = 10 V 0.7 TrenchFET Power MOSFETN-Channel 30 0.550.525 at VGS = 4.5 V 0.6 100 % Rg Tested0.890 at VGS = - 10 V - 0.5P-Channel - 30 0.8 APPLICATIONS1.7 at VGS = - 4.5

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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