SI2309CDS-T1-GE3 MOSFET Datasheet: P-Ch, 60V, 5.2A. Full specification with pinout and replacement list

SI2309CDS-T1-GE3 Specs and Replacement

Type Designator: SI2309CDS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 typ Ohm

Package: SOT23

SI2309CDS-T1-GE3 substitution

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SI2309CDS-T1-GE3 datasheet

0.1. Size:2454K cn vbsemi
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SI2309CDS-T1-GE3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dyn... See More ⇒

5.1. Size:202K vishay
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New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.345 at VGS = - 10 V - 1.6 - 60 2.7 nC 0.450 at VGS = - 4.5 V - 1.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D O... See More ⇒

6.1. Size:199K vishay
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