SI2309CDS-T1-GE3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2309CDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.2 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12(max) nC
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05(typ) Ohm
Package: SOT23
SI2309CDS-T1-GE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2309CDS-T1-GE3 Datasheet (PDF)
si2309cds-t1-ge3.pdf
SI2309CDS-T1-GE3www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dyn
si2309cds.pdf
New ProductSi2309CDSVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.345 at VGS = - 10 V - 1.6- 60 2.7 nC0.450 at VGS = - 4.5 V - 1.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DSS 2GTop ViewSi2309CDS (N9)** Marking CodeDO
si2309cd.pdf
New ProductSi2309CDSVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.345 at VGS = - 10 V - 1.6- 60 2.7 nC0.450 at VGS = - 4.5 V - 1.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DSS 2GTop ViewSi2309CDS (N9)** Marking CodeDO
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
