All MOSFET. SI2333CDS-T1-GE3 Datasheet

 

SI2333CDS-T1-GE3 Datasheet and Replacement


   Type Designator: SI2333CDS-T1-GE3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23
 

 SI2333CDS-T1-GE3 substitution

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SI2333CDS-T1-GE3 Datasheet (PDF)

 0.1. Size:866K  cn vbsemi
 si2333cds-t1-ge3.pdf pdf_icon

SI2333CDS-T1-GE3

SI2333CDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

 4.1. Size:1947K  kexin
 si2333cds-3.pdf pdf_icon

SI2333CDS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V)1 2+0.02+0.1 RDS(ON) 45m (VGS =-2.5V)0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 59m (VGS =-1.8V)G 1 3 D 1. Gate2. SourceS 2 3. D

 5.1. Size:224K  vishay
 si2333cds.pdf pdf_icon

SI2333CDS-T1-GE3

Si2333CDSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 2.5 V - 4.5 9 nC- 120.059 at VGS = - 1.8 V - 3.9APPLICATIONS Load Switc

 5.2. Size:1947K  kexin
 si2333cds ki2333cds.pdf pdf_icon

SI2333CDS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V)1 2+0.02+0.1 RDS(ON) 45m (VGS =-2.5V)0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 59m (VGS =-1.8V)G 1 3 D 1. Gate2. SourceS 2 3. D

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Datasheet: SI2302DS-T1-GE3 , SI2305ADS-T1-GE3 , SI2305CDS-T1-GE3 , SI2305DS-T1-GE3 , SI2309CDS-T1-GE3 , SI2312BDS-T1 , SI2312CDS-T1-GE3 , SI2324DS-T1-GE3 , STP75NF75 , SI2333DDS-T1 , SI2333DS-T1-GE3 , SI2335DS-T1 , SI2342DS-T1 , SI2351DS-T1 , SI2399DS-T1 , SI3911DV-T1 , SI4401BDY-T1 .

History: NCEP40T35ALL | P0260AI

Keywords - SI2333CDS-T1-GE3 MOSFET datasheet

 SI2333CDS-T1-GE3 cross reference
 SI2333CDS-T1-GE3 equivalent finder
 SI2333CDS-T1-GE3 lookup
 SI2333CDS-T1-GE3 substitution
 SI2333CDS-T1-GE3 replacement

 

 
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