SI2333CDS-T1-GE3 - аналоги, параметры транзистора

SI2333CDS-T1-GE3 даташит

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SI2333CDS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA

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SMD Type MOSFET P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V) 1 2 +0.02 +0.1 RDS(ON) 45m (VGS =-2.5V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 59m (VGS =-1.8V) G 1 3 D 1. Gate 2. Source S 2 3. D

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Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 2.5 V - 4.5 9 nC - 12 0.059 at VGS = - 1.8 V - 3.9 APPLICATIONS Load Switc

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