All MOSFET. SI4401BDY-T1 Datasheet

 

SI4401BDY-T1 Datasheet and Replacement


   Type Designator: SI4401BDY-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: SO8
 

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SI4401BDY-T1 Datasheet (PDF)

 ..1. Size:874K  cn vbsemi
 si4401bdy-t1.pdf pdf_icon

SI4401BDY-T1

SI4401BDY-T1www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 5.1. Size:248K  vishay
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SI4401BDY-T1

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

 6.1. Size:246K  vishay
 si4401bd.pdf pdf_icon

SI4401BDY-T1

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

 8.1. Size:251K  vishay
 si4401ddy.pdf pdf_icon

SI4401BDY-T1

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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