SI4947DY MOSFET Datasheet: P-Ch, 30V, 7.3A. Full specification with pinout and replacement list

SI4947DY Specs and Replacement

Type Designator: SI4947DY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SO8

SI4947DY substitution

- MOSFET ⓘ Cross-Reference Search

SI4947DY datasheet

..1. Size:53K vishay
si4947dy.pdf pdf_icon

Si4947DY Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.5 30 30 0.19 @ VGS = 4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 G2 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 3... See More ⇒

..2. Size:915K cn vbsemi
si4947dy.pdf pdf_icon

SI4947DY www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie... See More ⇒

8.1. Size:103K 1
si4947ady.pdf pdf_icon

Si4947ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = - 10 V - 3.9 TrenchFET Power MOSFETs - 30 0.135 at VGS = - 4.5 V - 3.0 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top... See More ⇒

8.2. Size:241K vishay
si4947ady.pdf pdf_icon