SI6913DQ-T1 PDF and Equivalents Search

 

SI6913DQ-T1 Specs and Replacement

Type Designator: SI6913DQ-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 typ Ohm

Package: TSSOP8

SI6913DQ-T1 substitution

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SI6913DQ-T1 datasheet

 ..1. Size:855K  cn vbsemi
 si6913dq-t1.pdf pdf_icon

SI6913DQ-T1

SI6913DQ-T1 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 ... See More ⇒

 6.1. Size:216K  vishay
 si6913dq.pdf pdf_icon

SI6913DQ-T1

Si6913DQ Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( )ID (A) Material categorization 0.021 at VGS = - 4.5 V For definitions of compliance please see - 5.8 www.vishay.com/doc?99912 0.028 at VGS = - 2.5 V - 12 - 5.0 0.037 at VGS = - 1.8 V - 4.4 APPLICATIONS Load Switch Battery Sw... See More ⇒

Detailed specifications: SI4920DY-T1, SI4944DY, SI4947DY, SI4948BEY-T1-E3, SI4953ADY-T1-E3, SI4953DY-T1-E3, SI6423DQ-T1, SI6435ADQ-T1, TK10A60D, SI7478DP-T1, SI9410BDY-T1, SI9933ADY, SI9948AEY-T1-E3, SI9955DY, SIR422DP-T1-GE3, SIR462DP-T1, SIR802DP-T1-GE3

Keywords - SI6913DQ-T1 MOSFET specs

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