All MOSFET. SI6913DQ-T1 Datasheet

 

SI6913DQ-T1 Datasheet and Replacement


   Type Designator: SI6913DQ-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 14 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036(typ) Ohm
   Package: TSSOP8
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SI6913DQ-T1 Datasheet (PDF)

 ..1. Size:855K  cn vbsemi
 si6913dq-t1.pdf pdf_icon

SI6913DQ-T1

SI6913DQ-T1www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2

 6.1. Size:216K  vishay
 si6913dq.pdf pdf_icon

SI6913DQ-T1

Si6913DQVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ()ID (A) Material categorization:0.021 at VGS = - 4.5 V For definitions of compliance please see- 5.8www.vishay.com/doc?999120.028 at VGS = - 2.5 V - 12 - 5.00.037 at VGS = - 1.8 V - 4.4APPLICATIONS Load Switch Battery Sw

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOT42S60L | HY4306A | IPI80N06S2L-05 | AP15TN1R5N

Keywords - SI6913DQ-T1 MOSFET datasheet

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